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DMNH6008SCT Datasheet N-channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor.

General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 60 V ±20 V ID Drain Current-Continuous 130 A IDM Drain Current-Single Pluse 200 A PD Total Dissipation @TC=25℃ 210 W TJ Max.

Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.7 ℃/W DMNH6008SCT isc website:.iscsemi.

Key Features

  • Drain Current.
  • ID= 130A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 60V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 8.0mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

DMNH6008SCT Distributor