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FCPF250N65S3 - N-Channel MOSFET

Datasheet Summary

Features

  • Drain-source on-resistance: RDS(on) ≤ 250mΩ@10V.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number FCPF250N65S3
Manufacturer INCHANGE
File Size 232.01 KB
Description N-Channel MOSFET
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isc N-Channel MOSFET Transistor FCPF250N65S3 ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 250mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 30 PD Total Dissipation @TC=25℃ 31 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 4.03 UNIT ℃/W isc website：www.iscsemi.
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