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FCPF250N65S3 - N-Channel MOSFET

This page provides the datasheet information for the FCPF250N65S3, a member of the FCPF250N65S3L1-F154 N-Channel MOSFET family.

Datasheet Summary

Description

SUPERFET III MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 210 mW.
  • Ultra Low Gate Charge (Typ. Qg = 24 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 248 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FCPF250N65S3

Datasheet Details

Part number FCPF250N65S3
Manufacturer ON Semiconductor
File Size 246.56 KB
Description N-Channel MOSFET
Datasheet download datasheet FCPF250N65S3 Datasheet
Additional preview pages of the FCPF250N65S3 datasheet.

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Full PDF Text Transcription

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MOSFET – Power, N-Channel, SUPERFET[ III, Easy Drive 650 V, 12 A, 250 mW FCPF250N65S3L1-F154 Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 210 mW • Ultra Low Gate Charge (Typ. Qg = 24 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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