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FDD770N15A - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤77mΩ.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor FDD770N15A ·FEATURES ·Static drain-source on-resistance: RDS(on)≤77mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 36 PD Total Dissipation @TC=25℃ 56.8 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 2.2 UNIT ℃/W isc website：www.iscsemi.