| Part Number | FDD770N15A |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performa.
* RDS(on) = 61 mΩ ( Typ.) @ VGS = 10 V, ID = 12 A * Fast Switching Speed * Low Gate Charge * High Performance Trench Technology for Extremely Low RDS(on) * High Power and Current Handling Capability * RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advan. |
FDD770N15A Datasheet
The FDD770N15A is a MOSFET.
| Part Number | FDD770N15A |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
FDD770N15A
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤77mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable.
*Static drain-source on-resistance: RDS(on)≤77mΩ *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-So. |