Part FIR4N65F
Description N-Channel MOSFET
Category MOSFET
Manufacturer Inchange Semiconductor
Size 194.74 KB
Inchange Semiconductor

FIR4N65F Overview

Key Features

  • Drain Current –ID= 4A@ TC=25℃
  • Drain Source Voltage- : VDSS= 650V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max)
  • Avalanche Energy Specified
  • Fast Switching
  • Simple Drive Requirements
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation
  • Designed for high efficiency switch mode power supply