FJA4213 Overview
·High Collector Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; RBE= ∞ -230 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA;.
| Part number | FJA4213 |
|---|---|
| Datasheet | FJA4213-INCHANGE.pdf |
| File Size | 202.82 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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·High Collector Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; RBE= ∞ -230 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| FJA4213 | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| FJA4210 | PNP Transistor |
| FJA4310 | NPN Transistor |
| FJA4313 | NPN Transistor |
| FJAF6810 | NPN Transistor |