FJA4213 Datasheet and Specifications PDF

The FJA4213 is a PNP Epitaxial Silicon Transistor.

Key Specifications

Mount TypeThrough Hole
Pins3
Max Operating Temp150 °C
Min Operating Temp-50 °C
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Part NumberFJA4213 Datasheet
ManufacturerFairchild Semiconductor
Overview 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = -17A • High Power Dissip.
* High Current Capability: IC = -17A
* High Power Dissipation : 130watts
* High Frequency : 30MHz.
* High Voltage : VCEO= -250V
* Wide S.O.A for reliable operation.
* Excellent Gain Linearity for low THD.
* Complement to 2SC5242/FJA4313.
* Thermal and electrical Spice models are available.
* Same tr.
Part NumberFJA4213 Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·High Collector Breakdown Voltage- : V(BR)CEO= -230V(Min.) ·Good Linearity of hFE ·Complement to Type FJA4313 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI. Collector-Emitter Breakdown Voltage IC= -10mA ; RBE= ∞ -230 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 -230 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A -3.0 V VBE(on) Base-Emitter On V.

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