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FJPF5021 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Em

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Datasheet Details

Part number FJPF5021
Manufacturer INCHANGE
File Size 228.57 KB
Description NPN Transistor
Datasheet download datasheet FJPF5021 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2 A 40 W 150 ℃ Tstg Storage Temperature -55~150 ℃ FJPF5021 isc website：www.iscsemi.
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