FJPF5027 Description
·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor FJPF5027 Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVEBO Emitter -Base Breakdown Voltage IE= 1mA; IC= 0 BVCEO Collector- Emitter Breakdown Voltage IC= 5mA;.