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FQA140N10 - N-Channel MOSFET

General Description

high efficiency switching DC/DC converters, and DC motor control.

Key Features

  • Drain Current.
  • ID= 140A@ TC=25℃.
  • Drain Source Voltage- : VDSS=100V(Min).
  • Static Drain-Source On-Resistance : RDS(on) =0.1Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor FQA140N10 FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.1Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in audio amplifier, high efficiency switching DC/DC converters, and DC motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 140 A IDM Drain Current-Single Pluse 560 A PD Total Dissipation @TC=25℃ 375 W TJ Max.