Download FQA140N10 Datasheet PDF
Inchange Semiconductor
FQA140N10
FQA140N10 is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES - Drain Current - ID= 140A@ TC=25℃ - Drain Source Voltage- : VDSS=100V(Min) - Static Drain-Source On-Resistance : RDS(on) =0.1Ω(Max) - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION - Designed for use in audio amplifier, high efficiency switching DC/DC converters, and DC motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage Gate-Source Voltage-Continuous ±30 Drain Current-Continuous Drain Current-Single Pluse Total Dissipation @TC=25℃ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to...