| Part Number | FQA140N10 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min.
* * * * * * * 140A, 100V, RDS(on) = 0.01Ω @VGS = 10 V Low gate charge ( typical 220 nC) Low Crss ( typical 470 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3P FQA Series ! S Absolute Maximum Ratings Symbo. |
FQA140N10 Datasheet and Specifications PDF
The FQA140N10 is a 100V N-Channel MOSFET.
Key Specifications
| Mount Type | Through Hole |
|---|---|
| Pins | 3 |
| Height | 23.8 mm |
| Length | 15.8 mm |
| Width | 5 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | FQA140N10 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in audio amplifier,
high efficiency switching DC/DC converters, and DC motor control.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
10.
*Drain Current *ID= 140A@ TC=25℃ *Drain Source Voltage- : VDSS=100V(Min) *Static Drain-Source On-Resistance : RDS(on) =0.1Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in audio amplifier, high efficien. |