Inchange Semiconductor FQP50N06
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | FQP50N06 |
|---|---|
| Datasheet | FQP50N06 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●Drain Current ID=50A@ TC=25℃●Drain Source Voltage- : VDSS=60V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)
●Fast Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High current , high speed switching●Switch mode power supplies
●DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor’s B+ function
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±25 V Drain Current-continuous@ TC=25℃ 50 ID A Drain Current-continuous@ TC=100℃ 35.4 PD Power Dissipation @TC=25℃ 120 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W FQP50N06 isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor●
ELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PAR...