FQP50N06
Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
Key Features
- 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
- Low gate charge ( typical 31 nC)
- Low Crss ( typical 65 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating
- Gate { {
- Drain
- Source
