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FQPF7N80C - N-Channel MOSFET

Key Features

  • Drain-source on-resistance: RDS(on) ≤ 1.9Ω@10V.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor FQPF7N80C ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 1.9Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High efficiency switch mode power supplies. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 6.6 IDM Drain Current-Single Pulsed 26.4 PD Total Dissipation @TC=25℃ 56 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Juction-to-case thermal resistance MAX 2.23 UNIT ℃/W isc website：www.iscsemi.