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Ultra fast Rectifier
INCHANGE Semiconductor
IDP08E65D1
FEATURES ·With TO-220 packaging ·Metal silicon junction, majority carrier conduction ·Low power loss, high efficiency ·Guardring for overvoltage protection ·High surge capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·High frequency inverters ·Reverse battery protection ·Polarity protection applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNI T
VRRM VRMS
VR IF(AV)
IFRM
IFSM
PD Tj
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
650
V
Average Rectified Forward Current @Tc=25℃ Tc=100℃
16 8
A
Repetitive Peak Surge Current (Square Wave)
24
A
Nonrepetitive Peak Surge Current
8.