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IDP08E65D1 - Diode

Datasheet Summary

Description

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Features

  • 650 V Emitter Controlled technology.
  • Temperature stable behaviour of key parameters.
  • Low forward voltage (VF).
  • Ultra fast recovery.
  • Low reverse recovery charge (Qrr).
  • Low reverse recovery current (Irrm).
  • Softness factor >1.
  • 175 °C junction operating temperature.
  • Pb-free lead plating; RoHS compliant.

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Datasheet preview – IDP08E65D1

Datasheet Details

Part number IDP08E65D1
Manufacturer Infineon
File Size 1.71 MB
Description Diode
Datasheet download datasheet IDP08E65D1 Datasheet
Additional preview pages of the IDP08E65D1 datasheet.

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Full PDF Text Transcription

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Diode RapidSwitchingEmitterControlledDiode IDP08E65D1 EmitterControlledDiodeRapid1Series Datasheet IndustrialPowerControl IDP08E65D1 EmitterControlledDiodeRapid1Series RapidSwitchingEmitterControlledDiode  Features: •650VEmitterControlledtechnology •Temperaturestablebehaviourofkeyparameters •Lowforwardvoltage(VF) •Ultrafastrecovery •Lowreverserecoverycharge(Qrr) •Lowreverserecoverycurrent(Irrm) •Softnessfactor>1 •175°Cjunctionoperatingtemperature •Pb-freeleadplating;RoHScompliant Applications: •AC/DCconverters •BoostdiodeinPFCstages •Freewheelingdiodesininvertersandmotordrives •Generalpurposeinverters •Switchmodepowersupplies A C C C A KeyPerformanceandPackageParameters Type Vrrm If Vf,Tvj=25°
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