IIPW60R045CP
Overview
- Static drain-source on-resistance: RDS(on)≤45mΩ
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- High peak current capability
| Part | IIPW60R045CP |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 220.02 KB |
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