Datasheet Details
| Part number | IIXFA22N65X2 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.02 KB |
| Description | N-Channel MOSFET |
| Datasheet | IIXFA22N65X2-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFA22N65X2 IIXFA22N65X2.
| Part number | IIXFA22N65X2 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.02 KB |
| Description | N-Channel MOSFET |
| Datasheet | IIXFA22N65X2-INCHANGE.pdf |
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·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·100% Avalanche Rated ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS .
·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 22 A IDM Pulse Drain Current 44 A Ptot Total Dissipation@TC=25℃ 390 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.32 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor IXFA22N65X2 IIXFA22N65X2 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
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