IPB065N10N3 - N-Channel MOSFET

Features

With To-263(D2PAK) package.
Low input capacitance and gate charge.
Low gate input resistance.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IPB065N10N3
Manufacturer	INCHANGE
File Size	254.37 KB
Description	N-Channel MOSFET
Datasheet	IPB065N10N3 Datasheet
Additional preview pages of the IPB065N10N3 datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor IPB065N10N3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 80 73 320 PD Total Dissipation @TC=25℃ 150 Tch Max.

Published: Oct 5, 2020 |