Datasheet4U Logo Datasheet4U.com

IPB065N10N3G - MOSFET

Key Features

  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPB065N10N3 N-Channel MOSFET INCHANGE
IPB065N03L N-Channel MOSFET INCHANGE
IPB065N03LG Power-Transistor Infineon Technologies
IPB065N06LG Power-Transistor Infineon Technologies
IPB067N08N3 N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPB065N10N3 MOSFET
IPB065N15N3G Power Transistor
IPB065N03L Power-Transistor
IPB067N08N3 Power-Transistor
IPB067N08N3G Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,100V IPB065N10N3G DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSª3Power-Transistor,100V IPB065N10N3G 1Description Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 D²PAK Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 6.