IPB065N10N3G
IPB065N10N3G is MOSFET manufactured by Infineon.
Description
Features
- N-channel,normallevel
- Excellentgatechargex RDS(on)product(FOM)
- Verylowon-resistance RDS(on)
- 175°Coperatingtemperature
- Pb-freeleadplating;Ro HSpliant
- Qualifiedaccordingto JEDEC1)fortargetapplication
- Idealforhigh-frequencyswitchingandsynchronousrectification
- Halogen-freeaccordingto IEC61249-2-21
D²PAK
Table1Key Performance Parameters
Parameter
Value
Unit
VDS 100 V
RDS(on),max
6.5 mΩ
ID 80 A
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/Ordering Code IPB065N10N3 G
Package PG-TO 263-3
Marking 065N10N
Related Links
- 1) J-STD20 and JESD22 Final Data Sheet
Rev.2.0,2014-07-04
Opti MOSª3Power-Transistor,100V
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