Download IPB65R125C7 Datasheet PDF
Inchange Semiconductor
IPB65R125C7
IPB65R125C7 is N-Channel MOSFET manufactured by Inchange Semiconductor.
EATURES - With To-263(D2PAK) package - Low input capacitance and gate charge - Low gate input resistance - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - Switching applications - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage VGSS ID IDM Gate-Source Voltage Drain Current-Continuous Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 18 12 Total Dissipation @TC=25℃ Tch Max. Operating Junction Temperature Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER...