IPB65R125C7
IPB65R125C7 is MOSFET manufactured by Infineon.
ption
Cool MOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredby Infineon Technologies. Cool MOS™C7seriesbinestheexperienceoftheleading SJ MOSFETsupplierwithhighclassinnovation.Theproductportfolio providesallbenefitsoffastswitchingsuperjunction MOSFETsoffering betterefficiency,reducedgatecharge,easyimplementationand outstandingreliability.
D²PAK tab
2 1 3
Features
- Increased MOSFETdv/dtruggedness
- Betterefficiencyduetobestinclass FOMRDS(on)- Eossand RDS(on)- Qg
- Bestinclass RDS(on)/package
- Easytouse/drive
- Pb-freeplating,halogenfreemoldpound
- Qualifiedforindustrialgradeapplicationsaccordingto JEDEC(J-STD20 and JESD22)
Drain Pin 2, tab
Gate Pin 1
Source Pin 3
Benefits
- Enablinghighersystemefficiency
- Enablinghigherfrequency/increasedpowerdensitysolutions
- Systemcost/sizesavingsduetoreducedcoolingrequirements
- Highersystemreliabilityduetoloweroperatingtemperatures
Applications
PFCstagesandhardswitching PWMstagesfore.g.puting,Server, Tele,UPSand Solar. Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended.
Table1Key Performance Parameters
Parameter VDS @ Tj,max RDS(on),max Qg.typ ID,pulse Eoss@400V Body diode di/dt Type/Ordering Code IPB65R125C7 Value 700 125 35 75 4.2 55 Package PG-TO 263 Unit V mΩ n C A µJ A/µs Marking 65C7125 Related Links see Appendix A
Final Data Sheet
Rev.2.0,2013-10-11
Free Datasheet http://..net/
650VCool MOS™C7Power Transistor IPB65R125C7
Tableof Contents
Description
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