Datasheet Summary
isc N-Channel MOSFET Transistor IPD025N06N, IIPD025N06N
- Features
- Static drain-source on-resistance:
RDS(on)≤2.5mΩ
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Optimized for synchronous rectification
-...
