Datasheet Summary
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-Transistor,60V IPD025N06N
DataSheet
Rev.2.5 Final
PowerManagement&Multimarket
1Description
Features
- Optimizedforsynchronousrectification
- 100%avalanchetested
- Superiorthermalresistance
- N-channel,normallevel
- QualifiedaccordingtoJEDEC1)fortargetapplications
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 60
RDS(on),max
2.5 mΩ
ID 90 A
QOSS
81 nC
QG(0V..10V)
71 nC
OptiMOSTMPower-Transistor,60V IPD025N06N
D-PAK...
