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IPD025N06N - MOSFET

Key Features

  • Optimized for synchronous rectification.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel, normal level.
  • Qualified according to JEDEC1) for target.

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V IPD025N06N DataSheet Rev.2.5 Final PowerManagement&Multimarket 1Description Features •Optimizedforsynchronousrectification •100%avalanchetested •Superiorthermalresistance •N-channel,normallevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 2.5 mΩ ID 90 A QOSS 81 nC QG(0V..