The IPD025N06N is a N-Channel MOSFET.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.5 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD025N06N Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD025N06N, IIPD025N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤2.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤2.5mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Optimized for synchronous rectification *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Dr. |
| Part Number | IPD025N06N Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Infineon |
| Overview |
Features
•Optimizedforsynchronousrectification •100%avalanchetested •Superiorthermalresistance •N-channel,normallevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freel.
*Optimizedforsynchronousrectification *100%avalanchetested *Superiorthermalresistance *N-channel,normallevel *QualifiedaccordingtoJEDEC1)fortargetapplications *Pb-freeleadplating;RoHScompliant *Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameter. |
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