IPD220N06L3 Overview
isc N-Channel MOSFET Transistor IPD220N06L3,IIPD220N06L3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency switching ·
IPD220N06L3 Key Features
- Static drain-source on-resistance
- DESCRITION -High frequency switching

