IPD220N06L3G
IPD220N06L3G is Power-Transistor manufactured by Infineon.
Features
- Ideal for high frequency switching and sync. rec.
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- N-channel, logic level
- 100% avalanche tested
- Pb-free plating; Ro HS pliant
- Qualified according to JEDEC1) for target applications
Type
IPD220N06L3 G
IPD220N06L3 G
Product Summary V DS R DS(on),max ID
60 V 22 mΩ 30 A
Package Marking
PG-TO-252-3 220N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3) E AS I D=20 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information
Value
30 21 120 13 ±20 36 -55 ... 175 55/175/56
Unit A m J V W °C
Rev. 2.0 page 1
2008-12-09
IPD220N06L3 G
Parameter
Symbol Conditions
Thermal characteristics...