• Part: IPD220N06L3G
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 209.85 KB
Download IPD220N06L3G Datasheet PDF
Infineon
IPD220N06L3G
IPD220N06L3G is Power-Transistor manufactured by Infineon.
Features - Ideal for high frequency switching and sync. rec. - Optimized technology for DC/DC converters - Excellent gate charge x R DS(on) product (FOM) - N-channel, logic level - 100% avalanche tested - Pb-free plating; Ro HS pliant - Qualified according to JEDEC1) for target applications Type IPD220N06L3 G IPD220N06L3 G Product Summary V DS R DS(on),max ID 60 V 22 mΩ 30 A Package Marking PG-TO-252-3 220N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse3) E AS I D=20 A, R GS=25 Ω Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Value 30 21 120 13 ±20 36 -55 ... 175 55/175/56 Unit A m J V W °C Rev. 2.0 page 1 2008-12-09 IPD220N06L3 G Parameter Symbol Conditions Thermal characteristics...