IPD530N15N3
Overview
- Static drain-source on-resistance: RDS(on)≤53mΩ
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- High frequency switching
| Part | IPD530N15N3 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 238.34 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IPD530N15N3 | Infineon | Power Transistor |
| IPD530N15N3G | Infineon | Power Transistor |