| Part Number | IPD530N15N3 |
|---|---|
| Manufacturer | Infineon |
| Overview |
IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(o.
* N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 53 mW 21 A * 175 °C operating temperature * Pb-free lead plating; RoHS compliant; Halogen Free * Qualified according to JEDEC1) for target applica. |
IPD530N15N3 Datasheet
The IPD530N15N3 is a Power Transistor.
| Part Number | IPD530N15N3 |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD530N15N3,IIPD530N15N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤53mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤53mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High frequency switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Volta. |