IPD60R180P7S Overview
Key Features
- Static drain-source on-resistance: RDS(on)≤0.18Ω
- Enhancement mode
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Fast switching
| Part | IPD60R180P7S |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 238.34 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IPD60R180P7S | Infineon | MOSFET |
| IPD60R180P7 | Infineon | MOSFET |
| IPD60R180C7 | Infineon | 600V MOSFET |
| IPD60R180CM8 | Infineon | MOSFET |