| Part Number | IPD60R180P7S Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD60R180P7S，IIPD60R180P7S
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.18Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob.
*Static drain-source on-resistance: RDS(on)≤0.18Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 . |
IPD60R180P7S Datasheet and Specifications PDF
The IPD60R180P7S is a N-Channel MOSFET.
| Part Number | IPD60R180P7S Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Infineon |
| Overview |
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*Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness *Significantreductionofswitchingandconductionlosses *ExcellentESDrobustness>2kV(HBM)forallproducts *BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A. |