Download IPD78CN10N Datasheet PDF
IPD78CN10N page 2
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Datasheet Summary

isc N-Channel MOSFET Transistor IPD78CN10N,IIPD78CN10N - Features - Static drain-source on-resistance: RDS(on)≤78mΩ - Enhancement mode: - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - Ideal for high-frequency switching and synchronous rectification -...