Datasheet4U Logo Datasheet4U.com

IPD78CN10NG - N-Channel MOSFET

Download the IPD78CN10NG datasheet PDF. This datasheet also covers the IPD78CN10N variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • TrenchFET® power MOSFET.
  • 100 % UIS tested TO-252.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPD78CN10N-VBsemi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IPD78CN10NG Power-Transistor Infineon
IPD78CN10N Power Transistor Infineon
IPD78CN10N N-Channel MOSFET INCHANGE
IPD70N03S4L-04 Power-Transistor Infineon Technologies
IPD70N04S3-07 Power-Transistor Infineon Technologies

Other Datasheets by VBsemi

Part Number Description
IPD78CN10N N-Channel MOSFET
IPD640N06LG N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPD78CN10N G IPD78CN10N G Datasheet N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.055 at VGS = 10 V 100 0.057 at VGS = 4.5 V ID (A) 25 25 Qg (Typ.) 21nC FEATURES • TrenchFET® power MOSFET • 100 % UIS tested TO-252 APPLICATIONS D • Primary side switch www.VBsemi.com G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Pulse Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.