Description
Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use - SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 20.2 A IDM Drain Current-Single Pulsed 66 A PD Total Dissipation @TC=25℃ 151 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ - SYMBOL PARAMETER Rth(ch-c) Channel-to-case MAX 0.83 UNIT ℃/W IPI65R190C6 isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.73mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=7.3A IGSS Gate-Source Leakage Current VGS=20V; VDS=0V IDSS Drain-Source Leakage Current VDS=650V; VGS= 0V VSD Diode forward voltage IF=11A; VGS = 0V IPI65R190C6 MIN TYP MAX UNIT 650 V 2.5 3.5 V 0.19 Ω 0.1 μA 1 μA 0.9 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
Key Features
- Static drain-source on-resistance: RDS(on) ≤0.19Ω
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
