IPI65R190C6 - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	IPI65R190C6
Manufacturer	INCHANGE
File Size	282.17 KB
Description	N-Channel MOSFET
Datasheet	IPI65R190C6 Datasheet
Additional preview pages of the IPI65R190C6 datasheet.

Product details

Description

Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 20.2 A IDM Drain Current-Single Pulsed 66 A PD Total Dissipation @TC=25℃ 151 W Tj Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Ch

Features

Static drain-source on-resistance: RDS(on) ≤0.19Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 29, 2020 |