Datasheet Details
| Part number | IPI65R190CFD |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 282.93 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPI65R190CFD-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor ·.
| Part number | IPI65R190CFD |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 282.93 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPI65R190CFD-INCHANGE.pdf |
|
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·Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 17.5 A IDM Drain Current-Single Pulsed 57.2 A PD Total Dissipation @TC=25℃ 151 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.83 ℃/W IPI65R190CFD isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IPI65R190CFD | CFD2 Power Transistor | Infineon Technologies |
|
IPI65R190C6 | Power Transistor | Infineon Technologies |
|
IPI65R190E6 | Power Transistor | Infineon Technologies |
| Part Number | Description |
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