Datasheet Details
| Part number | IPI65R280E6 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 282.31 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPI65R280E6-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor ·.
| Part number | IPI65R280E6 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 282.31 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPI65R280E6-INCHANGE.pdf |
|
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·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 13.8 A IDM Drain Current-Single Pulsed 39 A PD Total Dissipation @TC=25℃ 104 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.2 UNIT ℃/W IPI65R280E6 isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IPI65R280E6 | Power Transistor | Infineon Technologies |
| Part Number | Description |
|---|---|
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