IPI65R280E6 Datasheet | Infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor Cool MOS E6 650V Cool MOS™ E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final ..net In d u s tr ia l & M u l ti m a r k e t 650V Cool MOS™ E6 Power Transistor IPA65R280E6, IPB65R280E6 IPI65R280E6, IPP65R280E6 IPW65R280E6 Description Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Cool MOS™ C6 series bines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more pact, lighter, and cooler. Features - - - - Extremely low losses due to very low FOM Rdson- Qg and Eoss Very high mutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free gate pin 1 drain pin 2 Applications: Adapter source pin 3 Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally remended. Table 1 Parameter Key Performance Parameters Value 700 0.28 45 39 3.7 500 Package PG-TO247 PG-TO263 PG-TO262 PG-TO220 PG-TO220 Full PAK 65E6280 Unit V Ω n C A µJ A/µs Marking Related Links IFX Cool MOS Webpage IFX Design tools VDS @ Tj,max R DS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt Type / Ordering Code IPW65R280E6 IPB65R280E6 IPI65R280E6 IPP65R280E6 IPA65R280E6 1) J-STD20 and JESD22 Final Data Sheet Rev. 2.0, 2010-04-26 650V Cool MOS™ E6 Power Transistor IPx65R280E6 Table of Contents Table of Contents 1 Description - - -...