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IPI65R280E6 - Power Transistor

General Description

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.

CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation.

Key Features

  • Extremely low losses due to very low FOM Rdson.
  • Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free gate pin 1 drain pin 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS™ E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final www.DataSheet4U.net In d u s tr ia l & M u l ti m a r k e t 650V CoolMOS™ E6 Power Transistor IPA65R280E6, IPB65R280E6 IPI65R280E6, IPP65R280E6 IPW65R280E6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use.