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IPP50R280CE - N-Channel MOSFET

Datasheet Summary

Features

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  • Static drain-source on-resistance: RDS(on) ≤0.28Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number IPP50R280CE
Manufacturer INCHANGE
File Size 240.47 KB
Description N-Channel MOSFET
Datasheet download datasheet IPP50R280CE Datasheet
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isc N-Channel MOSFET Transistor IPP50R280CE，IIPP50R280CE ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 18.1 IDM Drain Current-Single Pulsed 42.9 PD Total Dissipation @TC=25℃ 119 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.
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