IPP60R060C7 - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	IPP60R060C7
Manufacturer	INCHANGE
File Size	240.81 KB
Description	N-Channel MOSFET
Datasheet	IPP60R060C7 Datasheet
Additional preview pages of the IPP60R060C7 datasheet.

Product details

Description

Combine the experience of the leading SJ MOSFET supplier with high class innovation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 35 IDM Drain Current-Single Pulsed 135 PD Total Dissipation @TC=25℃ 162 Tj Max.Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-

Features

br>.
Static drain-source on-resistance: RDS(on) ≤0.06Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 10, 2020 |