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isc N-Channel MOSFET Transistor
·FEATURES ·With low gate drive requirements ·Very high commutation ruggedness ·Extremely high frequency operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
IPP60R060P7
·APPLICATIONS ·Switching applications ·LCD&PDP TV ·PC silverbox ·UPS and solar
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM PD
Gate-Source Voltage Drain Current-Continuous@TC=25℃
TC=100℃ Drain Current-Single Pulsed
Total Dissipation
±20 48 30 151
164
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rt
IPP60R060P7 Datasheet
