Description
This new product series blends all advantages of a fast switching technology together with superior hard mutation robustness, without sacrificing easy implementation in the design-in process - SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9 IDM Drain Current-Single Pulsed 31 PD Total Dissipation @TC=25℃ 52 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ - SYMBOL PARAMETER Rth(ch-c) Channel-to-case Rth(ch-a) Channel-to-ambient MAX 2.39 62 UNIT ℃/W ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP60R280CFD7,IIPP60R280CFD7 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.18mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=3.6A IGSS Gate-Source Leakage Current VGS=20V; VDS=0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IF=3.6A; VGS = 0V MIN TYP MAX UNIT 600 V 3.5 4.5 V 0.28 Ω 0.1 μA 1 μA 1 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
Key Features
- Static drain-source on-resistance: RDS(on) ≤0.28Ω
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
