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IPP60R380P6

Manufacturer: Inchange Semiconductor
IPP60R380P6 datasheet preview

Datasheet Details

Part number IPP60R380P6
Datasheet IPP60R380P6-INCHANGE.pdf
File Size 241.13 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
IPP60R380P6 page 2

IPP60R380P6 Overview

·Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 10.6 IDM Drain Current-Single Pulsed 29 PD Total Dissipation @TC=25℃ 83 Tj Max. ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.32mA RDS(on) Drain-Source On-Resistance VGS=10V;.

IPP60R380P6 Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -Provide all benefits of a fast switching super junction MOS while not

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Brand Logo Part Number Description Other Manufacturers
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