Datasheet Details
| Part number | IPP60R385CP |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.82 KB |
| Description | N-Channel MOSFET |
| Download | IPP60R385CP Download (PDF) |
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Overview: isc N-Channel MOSFET Transistor IPP60R385CP，IIPP60R385CP ·.
| Part number | IPP60R385CP |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.82 KB |
| Description | N-Channel MOSFET |
| Download | IPP60R385CP Download (PDF) |
|
|
|
·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9 IDM Drain Current-Single Pulsed 27 PD Total Dissipation @TC=25℃ 83 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.5 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP60R385CP，IIPP60R385CP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IPP60R385CP | Power Transistor | Infineon Technologies |
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