IPP60R385CP
IPP60R385CP is Power Transistor manufactured by Infineon.
Cool MOSTM Power Transistor
Features
- Lowest figure-of-merit R ON x Qg
- Ultra low gate charge
- Extreme dv/dt rated
- High peak current capability
- Qualified according to JEDEC1) for target applications
- Pb-free lead plating; Ro HS pliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V
0.385 Ω 17 n C
PG-TO220
Cool MOS CP is specially designed for:
- Hard switching SMPS topologies
Type IPP60R385CP
Package PG-TO220
Ordering Code SP000082281
Marking 6R385P
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque
..net
Value 9.0 5.7 27 227 0.3 3 50 ±20 ±30 83 -55 ... 150
Unit A
T C=25 °C I D=3.4 A, V DD=50 V I D=3.4 A, V DD=50 V m J
A V/ns V
P tot T j, T stg
T C=25 °C
W °C Ncm 2007-08-28
M3 and M3.5 screws page 1
Rev. 2.2
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Parameter Symbol Conditions IS I S,pulse dv /dt Symbol Conditions min. Thermal characteristics Thermal resistance, junction
- case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R th JC R th JA leaded 1.6 mm (0.063 in.) from case for 10 s 1.5 62 K/W T C=25 °C Value 5.2 27 15 Values typ. max. V/ns Unit Unit...
