Datasheet Details
| Part number | IPP60R520CP |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.00 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPP60R520CP-INCHANGE.pdf |
|
|
Overview: isc N-Channel MOSFET Transistor IPP60R520CP，IIPP60R520CP ·.
| Part number | IPP60R520CP |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.00 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPP60R520CP-INCHANGE.pdf |
|
|
|
·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6.8 IDM Drain Current-Single Pulsed 17 PD Total Dissipation @TC=25℃ 66 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.9 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP60R520CP，IIPP60R520CP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IPP60R520CP | Power Transistor | Infineon Technologies |
|
IPP60R520C6 | MOSFET | Infineon Technologies |
|
IPP60R520E6 | MOSFET | Infineon Technologies |
| Part Number | Description |
|---|---|
| IPP60R520E6 | N-Channel MOSFET |
| IPP60R040C7 | N-Channel MOSFET |
| IPP60R060C7 | N-Channel MOSFET |
| IPP60R060P7 | N-Channel MOSFET |
| IPP60R070CFD7 | N-Channel MOSFET |
| IPP60R074C6 | N-Channel MOSFET |
| IPP60R080P7 | N-Channel MOSFET |
| IPP60R099C6 | N-Channel MOSFET |
| IPP60R099C7 | N-Channel MOSFET |
| IPP60R099CP | N-Channel MOSFET |