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IPP60R600CP

Manufacturer: Inchange Semiconductor
IPP60R600CP datasheet preview

Datasheet Details

Part number IPP60R600CP
Datasheet IPP60R600CP-INCHANGE.pdf
File Size 240.09 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
IPP60R600CP page 2

IPP60R600CP Overview

·Ultra low gate charge ·High peak current capability · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6.1 IDM Drain Current-Single Pulsed 15 PD Total Dissipation @TC=25℃ 60 Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.22mA RDS(on) Drain-Source On-Resistance VGS=10V;.

IPP60R600CP Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -Ultra low gate charge -High peak current capability

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Brand Logo Part Number Description Other Manufacturers
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Inchange Semiconductor logo - Manufacturer

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