IPP60R600P7 Datasheet | Infineon

s - Suitableforhardandsoftswitching(PFCand LLC)duetoanoutstanding  mutationruggedness - Significantreductionofswitchingandconductionlosses - Excellent ESDrobustness>2k V(HBM)forallproducts - Better RDS(on)/packageproductsparedtopetitionenabledbya  low RDS(on)- A(below1Ohm- mm²) - Fullyqualifiedacc.JEDECfor Industrial Applications Benefits - Easeofuseandfastdesign-inthroughlowringingtendencyandusage  across PFCand PWMstages - Simplifiedthermalmanagementduetolowswitchingandconduction  losses - Increasedpowerdensitysolutionsenabledbyusingproductswith  smallerfootprintandhighermanufacturingqualitydueto>2k VESD  protection - Suitableforawidevarietyofapplicationsandpowerranges Potentialapplications PFCstages,hardswitching PWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Tele and UPS. Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended. Table1Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max 600 mΩ Qg,typ 9 n C ID,pulse Eoss @ 400V µJ Body diode di F/dt A/µs Type/Ordering Code IPP60R600P7 Package PG-TO...