IPP60R600P7 Description
·bines the benefits of a fast switching SJ MOSFET with excellent ease of use · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 16 PD Total Dissipation @TC=25℃ 30 Tj Max. ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.08mA RDS(on) Drain-Source On-Resistance VGS=10V;.
IPP60R600P7 Key Features
- Static drain-source on-resistance