Datasheet4U Logo Datasheet4U.com

IPP60R600P7 - N-Channel MOSFET

Description

Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 16 PD Total Dissi

Features

  • br>.
  • Static drain-source on-resistance: RDS(on) ≤0.6Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IPP60R600P7

Datasheet Details

Part number IPP60R600P7
Manufacturer INCHANGE
File Size 240.72 KB
Description N-Channel MOSFET
Datasheet download datasheet IPP60R600P7 Datasheet
Additional preview pages of the IPP60R600P7 datasheet.

📁 Similar Datasheet

Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor IPP60R600P7，IIPP60R600P7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 16 PD Total Dissipation @TC=25℃ 30 Tj Max.
Published: |