Datasheet Details
| Part number | IPP65R225C7 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.07 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPP65R225C7-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor IPP65R225C7，IIPP65R225C7 ·.
| Part number | IPP65R225C7 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.07 KB |
| Description | N-Channel MOSFET |
| Datasheet | IPP65R225C7-INCHANGE.pdf |
|
|
|
·Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 41 PD Total Dissipation @TC=25℃ 63 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.99 62 UNIT ℃/W ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP65R225C7，IIPP65R225C7 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
IPP65R225C7 | MOSFET | Infineon |
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